The work presented here shows some of the experimental results obtained from analyzing the heterojunction between hydrogenated amorphous silicon (a-Si:H) and poly 3-hexylthiophene (P3HT). The goal of this study is to better understand the junction and ultimately use these materials in thin film hybrid solar cells. Two different structures were investigated; ITO/a-Si:H/P3HT/Cr/Ag and ITO/PEDOT/P3HT/a-Si:H/Cr/Ag. Surface morphology, EDAX, and transmission spectra were observed for the sputtered hydrogenated amorphous silicon layer. I-V characteristics were investigated using a Keithley 2602 Sourcemeter. Strong diode curves were obtained from both structures. There was little effect from a halogen light source. Further investigation of other parameters and effect from light is still on-going.
